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IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max (TO263) ID 200 10.7 88 V m A * Ideal for high-frequency switching and synchronous rectification Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 88 63 352 560 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=80 A, R GS=25 mJ V W C T C=25 C 300 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.2 page 1 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 0.5 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=160 V, V GS=0 V, T j=25 C V DS=160 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=88 A, (TO220, TO262) V GS=10 V, I D=88 A, (TO263) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=88 A 200 2 3 0.1 4 1 A V - 10 1 9.9 100 100 11 nA m 71 9.6 2.4 141 10.7 S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.2 page 2 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=44 A, R G=1.6 V GS=0 V, V DS=100 V, f =1 MHz - 5340 401 5 18 26 41 11 7100 533 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=44 A, V GS=0 to 10 V - 23 8 15 65 4.4 162 87 216 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=88 A, T j=25 C V R=100 V, I F=44 A, di F/dt =100 A/s - 1 142 640 88 352 1.2 A V ns - nC See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 320 100 280 80 240 200 60 P tot [W] 160 I D [A] 40 20 0 0 50 100 150 200 0 50 100 150 200 120 80 40 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 1 s 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 102 100 s 0.5 1 ms Z thJC [K/W] I D [A] 10 1 10-1 0.2 10 ms 0.1 DC 0.05 0.02 0.01 single pulse 100 10-1 10-1 100 101 102 103 10-2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.2 page 4 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 200 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 20 175 4.5 V 7V 150 15 5V R DS(on) [m] 125 5V I D [A] 7V 100 10 10 V 75 4.5 V 50 5 25 0 0 1 2 3 4 5 0 0 20 40 60 80 100 120 140 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 180 160 140 8 Typ. forward transconductance g fs=f(I D); T j=25 C 180 160 140 120 120 100 80 60 40 20 0 0 2 4 6 8 175 C 25 C g fs [S] I D [A] 100 80 60 40 20 0 0 25 50 75 100 125 150 V GS [V] I D [A] Rev. 2.2 page 5 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=88 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 35 4 30 3.5 2700 A 25 3 270 A R DS(on) [m] 2.5 V GS(th) [V] typ 20 2 15 98% 1.5 10 1 5 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 103 Coss 103 102 175 C 25C, 98% C [pF] 102 I F [A] 25 C Crss 101 175C, 98% 101 100 0 40 80 120 160 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.2 page 6 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=44 A pulsed parameter: V DD 10 25 C 8 100 C 100 V 160 V 125 C 6 10 V GS [V] I AS [A] 40 V 4 2 1 1 10 100 1000 0 0 20 40 60 80 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 230 V GS Qg 220 V BR(DSS) [V] 210 200 V g s(th) 190 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 180 T j [C] Rev. 2.2 page 7 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G PG-TO220-3: Outline Rev. 2.2 page 8 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G PG-TO263-3: Outline Rev. 2.2 page 9 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G PG-TO262-3: Outline Rev. 2.2 page 10 2009-10-21 IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 11 2009-10-21 |
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